Method for forming a photoresist pattern
US7467632B2 · kind B2 · utility
462Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2007 |
| Grant date | Dec 23, 2008 |
| Priority date | — |
| Expiry date | Aug 22, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A photoresist cleaning solution and method for forming photoresist patterns using the same. More specifically, disclosed are a photoresist cleaning solution comprising H2O and an ionic surfactant represented by Formula 1, and a method for forming a photoresist pattern using the same. By spraying the cleaning solution of the present invention over photoresist film before and/or after exposing step, pattern formation in an undesired region caused by ghost images can be removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.