Process window-based correction for photolithography masks
US7470492B2 · kind B2 · utility
9Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2004 |
| Grant date | Dec 30, 2008 |
| Priority date | — |
| Expiry date | Apr 12, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A correction for photolithography masks used in semiconductor and micro electromechanical systems is described. The correction is based on process windows. In one example, the invention includes evaluating a segment of an idealized photolithography mask at a plurality of different possible process variable values to estimate a corresponding plurality of different photoresist edge positions, comparing the estimated edge positions to a minimum critical dimension, and moving the segment on the idealized photolithography mask if the estimated edge positions do not satisfy the minimum critical dimension.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.