Dual damascene multi-level metallization

US7470613B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Birendra Agarwala · Hopewell Junction, US
• Eric M. Coker · Burlington, US
• Anthony Correale, Jr. · Raleigh, US
• Hazara S. Rathore · Stormville, US
• Timothy D. Sullivan · Batavia, US
• Richard A. Wachnik · Mount Kisco, US

Key dates

• Filing date: Jan 4, 2007
• Grant date: Dec 30, 2008
• Expiry date: Jan 27, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming an interconnect structure, the interconnect structure comprising: a lower level wire having a side and a bottom, the lower level wire comprising: a lower core conductor and a lower conductive liner, the lower conductive liner on the side and the bottom of the lower level wire; an upper level wire having a side and a bottom, the upper level wire comprising an upper core conductor and an upper conductive liner, the upper conductive liner on the side and the bottom of the upper level wire; and the upper conductive liner in contact with the lower core conductor and also in contact with the lower conductive liner in a liner-to-liner contact region.