Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7470626B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2006 |
| Grant date | Dec 30, 2008 |
| Priority date | — |
| Expiry date | Feb 6, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma reactor chamber is characterized by performing two steps for each one of plural selected chamber parameters. The first step consists of ramping the level of the one chamber parameter while sampling RF electrical parameters at an RF bias power input to said wafer support pedestal and computing from each sample of said RF electrical parameters the values of the plasma parameters. The second step consists of deducing, from the corresponding chamber parameter data generated in the first step, a single variable function for each of the plural plasma parameters having said one chamber parameter as an independent variable, and constructing combinations of these functions that are three variable functions having each of the chamber parameters as a variable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.