Semiconductor integrated circuit device
US7470923B2 · kind B2 · utility
12Cited by
2References
10Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 9, 2006 |
| Grant date | Dec 30, 2008 |
| Priority date | — |
| Expiry date | Mar 9, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.