Memory circuit using a reference for sensing
US7471582B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2006 |
| Grant date | Dec 30, 2008 |
| Priority date | — |
| Expiry date | Nov 5, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/063
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory includes a plurality of memory cells, a sense amplifier coupled to at least one of the plurality of memory cells, a temperature dependent current generator comprising a plurality of selectable temperature dependent current sources for generating a temperature dependent current, a temperature independent current generator comprising a plurality of selectable temperature independent current sources for generating a temperature independent current, and a summer coupled to the temperature dependent current generator and the temperature independent current generator for combining the temperature dependent current and the temperature independent current to generate a reference current for use by the sense amplifier. A temperature coefficient of the reference current is approximately a same as a temperature coefficient of a memory cell current of at least one of the plurality of memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.