Patent · US Expired

Method of growing nitrogenous semiconductor crystal materials

US7473316B1 · kind B1 · utility

2Cited by

4References

8Claims

0Family size

Assignee

Aixtron, Inc. · DE

Inventors

Bernd Schottker · Aachen, DE
Michael Heuken · Aachen, DE
Holger Jurgensen · Aachen, DE
Gerd Strauch · Aachen, DE
Bernd Wachtendorf · Baoshan, TW

Key dates

Filing date	Jul 24, 2000
Grant date	Jan 6, 2009
Priority date	—
Expiry date	Jul 24, 2025

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B29/406
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

What is described here is a process for the initial growth of nitrogenous semiconductor crystal materials in the form AXBYCZNVMW wherein A, B, C is an element of group II or III, N is nitrogen, M represents an element of group V or VI, and X, Y, Z, W denote the molar fraction of each element of this compound, using a, which are deposited on sapphire, SiC or Si, using various ramp functions permitting a continuous variation of the growth parameters during the initial growth.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.