Method for fabricating metal-oxide semiconductor transistors
US7473606B2 · kind B2 · utility
19Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2007 |
| Grant date | Jan 6, 2009 |
| Priority date | — |
| Expiry date | Apr 19, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a metal-oxide semiconductor transistor is disclosed. First, a semiconductor substrate having a gate structure thereon is provided, and a spacer is formed around the gate structure. An ion implantation process is performed to implant a molecular cluster containing boron into the semiconductor substrate surrounding the spacer for forming a source/drain region. The weight ratio of each boron atom within the molecular cluster is preferably less than 10%. Thereafter, a millisecond annealing process is performed to activate the molecular cluster within the source/drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.