Method for silicon based dielectric chemical vapor deposition
US7473655B2 · kind B2 · utility
409Cited by
3References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2005 |
| Grant date | Jan 6, 2009 |
| Priority date | — |
| Expiry date | Feb 17, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.