In-die optical metrology
US7474420B2 · kind B2 · utility
10Cited by
11References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2006 |
| Grant date | Jan 6, 2009 |
| Priority date | — |
| Expiry date | Mar 31, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B11/24
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
To determine one or more features of an in-die structure on a semiconductor wafer, a correlation is determined between one or more features of a test structure to be formed on a test pad and one or more features of a corresponding in-die structure. A measured diffraction signal measured off the test structure is obtained. One or more features of the test structure are determined using the measured diffraction signal. The one or more features of the in-die structure are determined based on the one or more determined features of the test structure and the determined correlation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.