Integrated circuit including resistivity changing material element
US7474555B2 · kind B2 · utility
5Cited by
1References
19Claims
0Family size
Inventors
Key dates
| Filing date | Mar 17, 2006 |
| Grant date | Jan 6, 2009 |
| Priority date | — |
| Expiry date | Oct 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory cell includes a MOS select transistor having a gate coupled to a word line, and a source and drain region coupled between first and second bit lines, respectively. A first phase change element is coupled between the first bit line and the source region of the MOS select transistor. A method of reading a selected cell in the array is provided by evaluating a body effect impact of a state of the phase change element associated with the selected cell on a MOS select transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.