Inventor · Putzbrunn, DE

Thomas Nirschl

68Patents
10h-index
48Co-inventors
74Inventor score

Filing activity: Dec 18, 2002 → Jan 22, 2014

Most-cited inventions

PatentTitleAreaCited byStatus
US7786464B2 Integrated circuit having dielectric layer including nanocrystals Electricity 102 Active
US7515461B2 Current compliant sensing architecture for multilevel phase change memory Physics 77 Active
US7619917B2 Memory cell with trigger element Physics 28 Active
US7292466B2 Integrated circuit having a resistive memory Physics 19 Expired
US7593255B2 Integrated circuit for programming a memory element Physics 17 Active
US7436695B2 Resistive memory including bipolar transistor access devices Emerging Cross-Sectional Technologies 14 Active
US7570507B2 Quasi-differential read operation Physics 14 Active
US7580297B2 Readout of multi-level storage cells Physics 14 Active
US8159857B2 Electronic device with a programmable resistive element and a method for blocking a device Physics 11 Active
US7646625B2 Conditioning operations for memory cells Physics 10 Active
US7778070B2 Memory with dynamic redundancy configuration Physics 10 Active
US8629500B2 Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor Electricity 10 Active
US7692949B2 Multi-bit resistive memory Emerging Cross-Sectional Technologies 9 Active
US7986024B2 Fuse sensing scheme Electricity 8 Active
US6724672B2 Integrated memory having a precharge circuit for precharging a bit line Physics 8 Expired
US7982488B2 Phase-change memory security device Electricity 7 Active
US7304342B2 Semiconductor memory cell and associated fabrication method Electricity 7 Expired
US8344429B2 Compact memory arrays Electricity 7 Active
US10319460B2 Systems and methods utilizing a flexible read reference for a dynamic read window Physics 6 Active
US7541609B2 Phase change memory cell having a sidewall contact Electricity 6 Active
US7545019B2 Integrated circuit including logic portion and memory portion Emerging Cross-Sectional Technologies 6 Active
US7345899B2 Memory having storage locations within a common volume of phase change material Electricity 6 Expired
US7995381B2 Method of programming resistivity changing memory Physics 6 Active
US7474555B2 Integrated circuit including resistivity changing material element Electricity 5 Active
US7864565B2 Data retention monitor Physics 5 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.