Generating mask patterns for alternating phase-shift mask lithography
US7475380B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2005 |
| Grant date | Jan 6, 2009 |
| Priority date | — |
| Expiry date | Jan 19, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/70
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A system, method and recording medium are provided for generating patterns of a paired set of a block mask and a phase shift mask from a data set defining a circuit layout to be provided on a substrate. A circuit layout is inputted and critical segments of the circuit layout are identified. Then, based on the identified critical segments, block mask patterns are generated and legalized for inclusion in a block mask. Thereafter, based on the identified critical segments and the block mask patterns, phase mask patterns are generated, legalized and colored to define a phase shift mask for use in a dual exposure method with the block mask for patterning the identified critical segments of the circuit layout.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.