Resist lower layer film material and method for forming a pattern
US7476485B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2004 |
| Grant date | Jan 13, 2009 |
| Priority date | — |
| Expiry date | May 25, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is disclosed a resist lower layer film material for a multilayer-resist film used in lithography which contains, at least, a polymer having a repeating unit represented by the following general formula (1). Thereby, there can be provided a resist lower layer film material for a multilayer-resist process, especially for a two-layer resist process, which functions as an excellent antireflection film especially for exposure with a short wavelength, namely has higher transparency, and has the optimal n value and k value, and is excellent in an etching resistance in substrate processing, and a method for forming a pattern on a substrate by lithography using it.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.