Patent · US Active

Method of reworking a semiconductor structure

US7476552B2 · kind B2 · utility

0Cited by

7References

18Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Axel Preusse · Radebeul, DE
Uwe Stoeckgen · Dresden, DE
Markus Nopper · Dresden, DE

Key dates

Filing date	Oct 11, 2005
Grant date	Jan 13, 2009
Priority date	—
Expiry date	Jan 19, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76849
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention allows correcting malfunctions occurring in the formation of a cap layer on an electrical element in a semiconductor substrate. It is detected whether a malfunction occurred in the formation of the cap layer. If a malfunction in the formation of the cap layer was detected, a rework procedure is performed. The rework procedure can comprise exposing the substrate to a first acid and a second acid.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.