Deposition process for iodine-doped ruthenium barrier layers
US7476615B2 · kind B2 · utility
2Cited by
1References
45Claims
0Family size
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Key dates
| Filing date | Nov 1, 2006 |
| Grant date | Jan 13, 2009 |
| Priority date | — |
| Expiry date | Jul 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76873
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An iodine-doped ruthenium barrier layer for use with copper interconnects within integrated circuits is formed using novel, iodine-containing ruthenium precursors in an ALD or CVD process. Ruthenium precursors that may be used include ruthenium containing carbonyls, arenes, cyclopentadienyls, and certain other ruthenium containing compounds. The ruthenium precursors include iodine to catalyze a subsequent copper metal deposition and to smooth the surface of the ruthenium layer. The iodine concentration across the thickness of the ruthenium barrier layer may be constant or may be graded.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.