Method of manufacturing non-volatile memory cell

US7479426B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Jung-Ching Chen · Taichung, TW
• Chuang-Hsin Chueh · Taipei, TW

Key dates

• Filing date: Aug 8, 2006
• Grant date: Jan 20, 2009
• Expiry date: Feb 19, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6891

Abstract

A non-volatile memory cell includes a substrate, a first isolation structure positioned in a first region on the substrate, a second isolation structure surrounding a second region on the substrate, a control gate positioned on the first isolation structure in the first region, a first insulating layer positioned on the control gate, a second insulating layer positioned on the portion of the substrate in the second region, and a floating gate positioned on the first insulating layer and the second insulating layer.