Method of forming a circuit having subsurface conductors
US7479435B1 · kind B1 · utility
0Cited by
42References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2004 |
| Grant date | Jan 20, 2009 |
| Priority date | — |
| Expiry date | Dec 21, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOS transistor and subsurface collectors can be formed by using a hard mask and precisely varying the implant angle, rotation, dose, and energy. In this case, a particular atomic species can be placed volumetrically in a required location under the hard mask. The dopant can be implanted to form sub-silicon volumes of arbitrary shapes, such as pipes, volumes, hemispheres, and interconnects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.