Germanium deposition
US7479443B2 · kind B2 · utility
15Cited by
18References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2007 |
| Grant date | Jan 20, 2009 |
| Priority date | — |
| Expiry date | Oct 4, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method comprises, in a reaction chamber, depositing a seed layer of germanium over a silicon-containing surface at a first temperature. The seed layer has a thickness between about one monolayer and about 1000 Å. The method further comprises, after depositing the seed layer, increasing the temperature of the reaction chamber while continuing to deposit germanium. The method further comprises holding the reaction chamber in a second temperature range while continuing to deposit germanium. The second temperature range is greater than the first temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.