Magnetic tunnel junction device and writing/reading for said device
US7480175B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2007 |
| Grant date | Jan 20, 2009 |
| Priority date | — |
| Expiry date | Jul 19, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3254
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The device successively comprises a first electrode (12), a magnetic reference layer (1), a tunnel barrier (3), a magnetic storage layer (4) and a second electrode (13). At least one first thermal barrier is arranged between the storage layer (4) and the second electrode (13) and is formed by a material having a thermal conductivity lower than 5W/m/° C. A second thermal barrier can be formed by a layer arranged between the first electrode (12) and the reference layer (1). A write phase of the method comprises flow of an electric current (I1), through the tunnel junction, from the storage layer (4) to the reference layer (1), whereas a read phase comprises flow of an electric current (I2) in the opposite direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.