Lightly doped silicon carbide wafer and use thereof in high power devices

US7482068B2 · kind B2 · utility

Assignees

• Norstel AB · SE
• Siced Electronics Development GmbH & Co. KG · DE

Inventors

• Alexandre Ellison · Säter, SE
• Björn Magnusson · Säter, SE
• Asko Vehanen · Espoo, FI
• Dietrich Stephani · Bubenreuth, DE
• Heinz Mitlehner · Uttenreuth, DE
• Peter Friedrichs · Koblenzer Straße, DE

Key dates

• Filing date: Aug 22, 2003
• Grant date: Jan 27, 2009
• Expiry date: Mar 31, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/931
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A uniform silicon carbide single crystal with either an n-type or a p-type conductivity. The crystal has a net carrier concentration less than 1015 cm−3 and a carrier lifetime of at least 50 ns at room temperature.