Patent · US Active

Method for producing through-contacts and a semiconductor component with through-contacts

US7482198B2 · kind B2 · utility

21Cited by

6References

9Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Michael Bauer · Nittendorf, DE
Edward Fuergut · Nuremberg, DE
Simon Jerebic · Regensburg, DE
Holger Woerner · Regensburg, DE

Key dates

Filing date	Oct 26, 2006
Grant date	Jan 27, 2009
Priority date	—
Expiry date	Feb 17, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH05K2203/105
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method is described for producing through-contacts through a panel-shaped composite body including semiconductor chips and a plastic mass filled with conductive particles. The panel-shaped composite body is introduced between two high-voltage point electrodes. The point electrodes are oriented at positions at which through-contacts are to be introduced through the plastic mass. A high voltage is applied to the point electrodes thereby, forming the through-contacts through the plastic mass.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.