Patent · US Active

Technique for creating different mechanical strain by a contact etch stop layer stack with an intermediate etch stop layer

US7482219B2 · kind B2 · utility

3Cited by

1References

21Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Kai Frohberg · Meißen, DE
Carsten Peters · Dresden, DE
Matthias Schaller · Dresden, DE
Heike Salz · Radebeul, DE

Key dates

Filing date	Jun 15, 2006
Grant date	Jan 27, 2009
Priority date	—
Expiry date	Jan 24, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/201
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention provides a technique for forming differently stressed contact etch stop layers, wherein sidewall spacers are removed prior to the formation of the contact etch stop layers. During the partial removal of respective contact etch stop layers, a corresponding etch stop layer regime is used to substantially avoid any unwanted stress-inducing material residuals, thereby significantly enhancing the stress transfer mechanism.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.