MOSgated power semiconductor device with source field electrode
US7482654B2 · kind B2 · utility
5Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2005 |
| Grant date | Jan 27, 2009 |
| Priority date | — |
| Expiry date | Mar 9, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
A power semiconductor device which includes a source field electrode, and at least one insulated gate electrode adjacent a respective side of the source field electrode, the source field electrode and the gate electrode being disposed in a common trench, and a method for fabricating the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.