Inductively coupled high-density plasma source
US7482757B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2002 |
| Grant date | Jan 27, 2009 |
| Priority date | — |
| Expiry date | Dec 31, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high-density plasma source (100) is disclosed. The source includes an annular insulating body (300) with an annular cavity (316) formed within. An inductor coil (340) serving as an antenna is arranged within the annular cavity and is operable to generate a first magnetic field within a plasma duct (60) interior region (72) and inductively couple to the plasma when the annular body is arranged to surround a portion of the plasma duct. A grounded conductive housing (400) surrounds the annular insulating body. An electrostatic shield (360) is arranged adjacent the inner surface of the insulating body and is grounded to the conductive housing. Upper and lower magnet rings (422 and 424) are preferably arranged adjacent the upper and lower surfaces of the annular insulating body outside of the conductive housing. A T-match network is in electrical communication with said inductor coil and is adapted to provide for efficient transfer of RF power from an RF power source to the plasma. At least one plasma source can be used to form a high-density plasma suitable for plasma processing of a workpiece residing in a plasma chamber in communication with the at least one source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.