Method of forming titanium film by CVD
US7484513B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2005 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Oct 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76855
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invenitioin. The method includes the steps of loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500° C. or below during the deposition of the Ti film. The flow rate of the SiH4 gas is from 30 to 70% of the flow rate of the TiCl4 gas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.