Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target
US7484546B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2006 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Jun 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a sputtering target for a phase change memory and a phase change memory film formed with such a target, and the manufacturing method thereof, characterized in that the sputtering target is composed from elements of not less than a three component system and has as its principal component one or more components selected from stibium, tellurium and selenium, and the compositional deviation in relation to the intended composition is ±1.0 at % or less. This sputtering target for a phase change memory is capable of reducing, as much as possible, impurities that cause the reduction in the number of times rewriting can be conducted as a result of such impurities segregating and condensing in the vicinity of the boundary face of the memory point and non-memory point; in particular, impurity elements that affect the crystallization speed, reducing the compositional deviation of the target in relation to the intended composition, and improving the rewriting properties and crystallization speed of a phase change memory by suppressing the compositional segregation of the target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.