Hybrid substrate technology for high-mobility planar and multiple-gate MOSFETS
US7485506B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2007 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Oct 3, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A hybrid substrate having a high-mobility surface for use with planar and/or multiple-gate metal oxide semiconductor field effect transistors (MOSFETs) is provided. The hybrid substrate has a first surface portion that is optimal for n-type devices, and a second surface portion that is optimal for p-type devices. Due to proper surface and wafer flat orientations in each semiconductor layers of the hybrid substrate, all gates of the devices are oriented in the same direction and all channels are located on the high mobility surface. The present invention also provides for a method of fabricating the hybrid substrate as well as a method of integrating at least one planar or multiple-gate MOSFET thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.