Field effect device including inverted V shaped channel region and method for fabrication thereof

US7485510B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Huilong Zhu · Poughkeepsie, US
• Ravikumar Ramachandran · Beacon, US
• Effendi Leobandung · Stormville, US
• Mahender Kumar · Hopewell Junction, US
• Wenjuan Zhu · Fishkill, US
• Christine Norris · Stamford, US

Key dates

• Filing date: Oct 3, 2006
• Grant date: Feb 3, 2009
• Expiry date: Aug 1, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6734

Abstract

A semiconductor structure includes a semiconductor layer that includes an inverted V shaped channel region that allows avoidance of a raised source/drain region within the semiconductor structure. In one embodiment, a generally conventional gate electrode is located over a planar surface of the semiconductor layer over the inverted V shaped channel region. In another embodiment, the foregoing generally conventional gate electrode is used in conjunction with an inverted V shaped gate electrode that is located within an inverted V shaped notch that comprises the inverted V shaped channel region.