Thermally assisted integrated MRAM design and process for its manufacture
US7486545B2 · kind B2 · utility
32Cited by
11References
21Claims
0Family size
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Key dates
| Filing date | Nov 1, 2005 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | May 24, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory element uses a conventional MTJ for reading purposes and a separate magnetic reference stack which is briefly heated while information is written into it. This information is then magnetostatically imposed on the MTJ's free layer which is located nearby. In this way the MTJ can be optimized for maximum dr/r while the reference stack can be optimized for optimum stability, since there is no half select problem. A process for manufacturing the memory element is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.