Interconnect structure and process of making the same

US7488679B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Theodorus E. Standaert · Clifton Park, US
• Pegeen M. Davis · Millbrook, US
• John A. Fitzsimmons · Poughkeepsie, US
• Stephen E. Greco · Lagrangeville, US
• Tze-man Ko · Hopewell Junction, US
• Naftali E. Lustig · Ossining, US
• Lee M. Nicholson · Katonah, US
• Sujatha Sankaran · New Paltz, US

Key dates

• Filing date: Jul 31, 2006
• Grant date: Feb 10, 2009
• Expiry date: Apr 19, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76846
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming an interconnect structure in an inter-layer dielectric (ILD) material, the method include the steps of creating one or more via openings in the ILD material; forming a first liner covering at least one of the one or more via openings; creating one or more trench openings on top of at least one of the one or more via openings covered by the first liner; and forming a second liner covering the trenching openings and at least part of the first liner. An interconnect structure formed by the method is also provided.