Naftali E. Lustig
68Patents
14h-index
76Co-inventors
87Inventor score
Filing activity: Oct 25, 1991 → Apr 24, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5433651A | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing | Physics | 473 | Expired |
| US5470661A | Diamond-like carbon films from a hydrocarbon helium plasma | Emerging Cross-Sectional Technologies | 265 | Expired |
| US6573606B2 | Chip to wiring interface with single metal alloy layer applied to surface of copper interconnect | Electricity | 258 | Expired |
| US5337015A | In-situ endpoint detection method and apparatus for chemical-mechanical polishing using low amplitude input voltage | Physics | 130 | Expired |
| US6153043A | Elimination of photo-induced electrochemical dissolution in chemical mechanical polishing | Electricity | 82 | Expired |
| US6020264A | Method and apparatus for in-line oxide thickness determination in chemical-mechanical polishing | Electricity | 62 | Expired |
| US5569501A | Diamond-like carbon films from a hydrocarbon helium plasma | Emerging Cross-Sectional Technologies | 53 | Expired |
| US6632377B1 | Chemical-mechanical planarization of metallurgy | Electricity | 47 | Expired |
| US6375693B1 | Chemical-mechanical planarization of barriers or liners for copper metallurgy | Electricity | 47 | Expired |
| US9502350B1 | Interconnect scaling method including forming dielectric layer over subtractively etched first conductive layer and forming second conductive material on dielectric layer | Electricity | 22 | Active |
| US9601426B1 | Interconnect structure having subtractive etch feature and damascene feature | Electricity | 21 | Active |
| US10177031B2 | Subtractive etch interconnects | Electricity | 19 | Active |
| US9171801B2 | E-fuse with hybrid metallization | Electricity | 17 | Active |
| US8232646B2 | Interconnect structure for integrated circuits having enhanced electromigration resistance | Electricity | 17 | Active |
| US9536830B2 | High performance refractory metal / copper interconnects to eliminate electromigration | Electricity | 13 | Active |
| US8633707B2 | Stacked via structure for metal fuse applications | Electricity | 12 | Active |
| US8030707B2 | Semiconductor structure | Electricity | 12 | Active |
| US5317190A | Oxygen assisted ohmic contact formation to N-type gallium arsenide | Electricity | 12 | Expired |
| US9059170B2 | Electronic fuse having a damaged region | Electricity | 11 | Active |
| US9685404B2 | Back-end electrically programmable fuse | Electricity | 11 | Active |
| US5358899A | Oxygen assisted ohmic contact formation to n-type gallium arsenide | Electricity | 9 | Expired |
| US7488679B2 | Interconnect structure and process of making the same | Electricity | 9 | Active |
| US8129269B1 | Method of improving mechanical properties of semiconductor interconnects with nanoparticles | Emerging Cross-Sectional Technologies | 8 | Active |
| US9142506B2 | E-fuse structures and methods of manufacture | Electricity | 7 | Active |
| US8736020B2 | Electronic anti-fuse | Electricity | 7 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.