Method and apparatus for the improvement of material/voltage contrast
US7488937B2 · kind B2 · utility
1Cited by
2References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2005 |
| Grant date | Feb 10, 2009 |
| Priority date | — |
| Expiry date | Sep 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and system for registering a CAD layout to a Focused Ion Beam image for through-the substrate probing, without using an optical image and without requiring biasing, includes an improved method of trench endpointing during the FIB milling operation with a low beam energy. The method further includes removal of Ga at the trench floor using XeF2, as well as the deposition of an insulating layer onto the trench floor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.