Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements
US7489541B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2005 |
| Grant date | Feb 10, 2009 |
| Priority date | — |
| Expiry date | Dec 21, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, providing a spacer layer, and providing a free layer. The free layer is ferrimagnetic and includes at least one of a conductive ferrite, a garnet, a ferrimagnetic alloy excluding a rare earth, a heavy rare-earth-transition metal alloy, a half-metallic ferrimagnetic, and a bilayer. The bilayer includes a rare earth-transition metal alloy layer and a spin current enhancement layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.