Method and semiconductor structure for monitoring the fabrication of interconnect structures and contacts in a semiconductor device

US7491555B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Matthias Lehr · Dresden, DE
• Kai Frohberg · Meißen, DE
• Holger Schuehrer · Dresden, DE

Key dates

• Filing date: May 23, 2006
• Grant date: Feb 17, 2009
• Expiry date: Dec 27, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76843
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

By measuring an electric characteristic of a test pad that is connected to a plurality of test vias formed in accordance with a specified process flow for forming contacts and vias of a semiconductor device, one or more process specific parameters may quantitatively be estimated. Thus, a fast and precise measurement method for contacts and vias is provided in a non-destructive manner.