Lithographic apparatus, system and device manufacturing method
US7491951B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 28, 2005 |
| Grant date | Feb 17, 2009 |
| Priority date | — |
| Expiry date | Feb 18, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/7095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention relates to a lithographic apparatus that includes a system configured to condition a radiation beam or project a patterned radiation beam onto a target portion of a substrate. The system includes an optically active device configured to direct the radiation beam or the patterned radiation beam, respectively, and a support structure configured to support the optically active device. The apparatus further includes a gas supply for providing a background gas into the system. The radiation beam or patterned radiation beam react with the background gas to form a plasma that includes a plurality of ions. The support structure includes an element that includes a material that has a low sputtering yield, a high sputter threshold energy, or a high ion implantation yield, to reduce sputtering and the creation of sputtering products.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.