Methods involving resetting spin-torque magnetic random access memory
US7492631B1 · kind B1 · utility
7Cited by
2References
1Claims
0Family size
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Key dates
| Filing date | May 9, 2008 |
| Grant date | Feb 17, 2009 |
| Priority date | — |
| Expiry date | May 9, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An exemplary method for resetting a spin-transfer based random access memory system, the method comprising, inducing a first current through a conductor, wherein the first current is operative to change a direction of orientation of a magnetic reference layer, inducing a second current from the drain terminal to the write terminal via a conductive layer, wherein the second current is operative to change the direction of a magnetic state of a free layer magnet, and inducing a third current through the conductor, wherein the third current is operative to change the direction of magnetic orientation of the reference layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.