Method for correction of defects in lithography masks
US7494748B2 · kind B2 · utility
0Cited by
8References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2004 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Sep 27, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/70
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for correction of defects in lithography masks includes determining the existence of mask defects on an original mask, and identifying a stitchable zone around each of the mask defects found on the original mask. Each of the identified stitchable zones on the original mask is blocked out such that circuitry within the stitchable zones is not printed out during exposure of the original mask. A repair mask is formed, the repair mask including corrected circuit patterns from each of the identified stitchable zones.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.