Transistor with improved tip profile and method of manufacture thereof
US7494858B2 · kind B2 · utility
92Cited by
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15Claims
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Key dates
| Filing date | Jun 30, 2005 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Feb 22, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments are an improved transistor structure and the method of fabricating the structure. In particular, a wet etch of an embodiment forms source and drain regions with an improved tip shape to improve the performance of the transistor by improving control of short channel effects, increasing the saturation current, improving control of the metallurgical gate length, increasing carrier mobility, and decreasing contact resistance at the interface between the source and drain and the silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.