Methods for uniform doping of non-planar transistor structures
US7494862B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2006 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Oct 12, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0135
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for uniformly tip doping a silicon body of a non-planar transistor and devices and systems formed by such methods. In one embodiment, a method can include vertical tip ion implantation of a silicon body with at least three surfaces on a substrate followed by conformal deposition of a dielectric material. The dielectric material can be selectively etched to expose a top surface of the silicon body followed by selective re-oxidation of the top surface for form a mask. The remaining dielectric material can be removed followed by angled ion implantation of at least two sidewalls of the silicon body. The mask can be removed resulting in a silicon body with uniform doping.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.