Protection in integrated circuits
US7494894B2 · kind B2 · utility
2Cited by
34References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2002 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Aug 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76235
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method including, prior to a plasma heat-up operation, forming a liner on a structure coated with an insulator. And a method including forming a trench on a substrate, forming an insulator on the trench, and after forming a liner having a thickness of between about 50 angstroms and about 400 angstroms on the insulator, applying a plasma heat-up operation to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.