Method of producing mixed substrates and structure thus obtained
US7494897B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2003 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Feb 9, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76275
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The inventive method includes a preparation step during which the substrate is covered with a layer, a pressing step in which a mould including a pattern of recesses and protrusions is pressed into part of the thickness of the aforementioned layer, at least one etching step in which the layer is etched until parts of the surface of the substrate have been stripped, and a substrate etching step whereby the substrate is etched using an etching pattern which is defined from the mould pattern. The preparation step includes a sub-step consisting of the formation of a lower sub-layer of curable material, a step involving the curing of said layer and a sub-step including the formation of an outer sub-layer which is adjacent to the cured sub-layer. Moreover, during the pressing step, the above-mentioned protrusions in the mould penetrate the outer sub-layer until contact is reached with the cured sub-layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.