Strained metal silicon nitride films and method of forming
US7494937B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 30, 2007 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Aug 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a strained metal silicon nitride film and a semiconductor device containing the strained metal silicon nitride film. The method includes exposing a substrate to a gas containing a metal precursor, exposing a substrate to a gas containing a silicon precursor, exposing the substrate to a gas containing a first nitrogen precursor configured to react with the metal precursor or the silicon precursor with a first reactivity characteristic, and exposing the substrate to a gas pulse containing a second nitrogen precursor configured to react with the metal precursor or the silicon precursor with a second reactivity characteristic different than the first reactivity characteristic such that a property of the metal silicon nitride film formed on the substrate changes to provide a strained metal silicon nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.