Robert D. Clark
98Patents
13h-index
72Co-inventors
87Inventor score
Filing activity: Jan 3, 1977 → Sep 16, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7651961B2 | Method for forming strained silicon nitride films and a device containing such films | Electricity | 510 | Active |
| US7767262B2 | Nitrogen profile engineering in nitrided high dielectric constant films | Chemistry; Metallurgy | 501 | Active |
| US4679000A | Bidirectional current time integration device | Electricity | 219 | Expired |
| US8580664B2 | Method for forming ultra-shallow boron doping regions by solid phase diffusion | Electricity | 38 | Active |
| US10522343B2 | Method of enhancing high-k film nucleation rate and electrical mobility in a semiconductor device by microwave plasma treatment | Electricity | 36 | Active |
| US6185506A | Method for selecting an optimally diverse library of small molecules based on validated molecular structural descriptors | Emerging Cross-Sectional Technologies | 33 | Expired |
| US7939455B2 | Method for forming strained silicon nitride films and a device containing such films | Electricity | 28 | Active |
| US7772073B2 | Semiconductor device containing a buried threshold voltage adjustment layer and method of forming | Electricity | 24 | Active |
| US5560522A | Push opened valve for dispensing liquids | Performing Operations; Transporting | 23 | Expired |
| US8481341B2 | Epitaxial film growth in retrograde wells for semiconductor devices | Electricity | 22 | Active |
| US7261118B2 | Method and vessel for the delivery of precursor materials | Emerging Cross-Sectional Technologies | 18 | Expired |
| US4140903A | Precision speed control for optical scanners | Electricity | 16 | Expired |
| US7713868B2 | Strained metal nitride films and method of forming | Electricity | 15 | Active |
| US8865581B2 | Hybrid gate last integration scheme for multi-layer high-k gate stacks | Electricity | 13 | Active |
| US7531452B2 | Strained metal silicon nitride films and method of forming | Electricity | 13 | Active |
| US7494937B2 | Strained metal silicon nitride films and method of forming | Electricity | 12 | Active |
| US5090600A | Liquid pressure opened pouring spout | Physics | 11 | Expired |
| US8313994B2 | Method for forming a high-K gate stack with reduced effective oxide thickness | Electricity | 10 | Active |
| US8003503B1 | Method of integrating stress into a gate stack | Electricity | 10 | Active |
| US7790628B2 | Method of forming high dielectric constant films using a plurality of oxidation sources | Electricity | 10 | Active |
| US7165275B2 | Toilet mounting assembly | Fixed Constructions | 10 | Expired |
| US10727057B2 | Platform and method of operating for integrated end-to-end self-aligned multi-patterning process | Electricity | 9 | Active |
| US7833913B2 | Method of forming crystallographically stabilized doped hafnium zirconium based films | Chemistry; Metallurgy | 9 | Active |
| US6535819B1 | Optimal dissimilarity method for choosing distinctive items of information from a large body of information | Physics | 7 | Expired |
| US8569158B2 | Method for forming ultra-shallow doping regions by solid phase diffusion | Electricity | 7 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.