Manufacturing method of semiconductor device, and substrate processing apparatus
US7494941B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2004 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Jun 14, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
At a time of a substrate loading step or/and at a time of a substrate unloading step, particles are effectively eliminated from a reaction chamber.Provided are a step of loading at least one wafer 200 into a reaction chamber 201, a step of introducing reaction gas into the reaction chamber 201, and exhausting an inside of the reaction chamber 201, thereby processing the wafer 200, and a step of unloading the processed wafer 200 from the reaction chamber 201. In the step of loading the wafer 200 or/and in the step of unloading the wafer 200, the inside of the reaction chamber 201 is exhausted at a larger exhaust flow rate than an exhaust flow rate in the step of processing the wafer 200.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.