Reading phase change memories
US7495944B2 · kind B2 · utility
15Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2005 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Feb 24, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A read current high enough to threshold a phase change memory element may be used to read the element without thresholding the memory element. The higher current may improve performance in some cases. The memory element does not threshold because the element is read and the current stopped prior to triggering the memory element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.