Non-volatile memory cell for storage of a data item in an integrated circuit
US7495945B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 13, 2006 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Apr 1, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a non-volatile memory cell for storage of a data item in an integrated circuit, comprising a resistive memory element which may have different conductance states depending on the stored data item, a memory unit for passing the stored data item to an integrated circuit, a read unit which can be activated in order to pass a data item on for storage in the memory unit as a function of the conductance state of the memory element, a control unit in order to activate the read unit so that the data item to be passed on is stored in the memory unit, and in order to deactivate the read unit after storage of the data item in the memory unit, such that the memory element is isolated from the memory unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.