Phase change memory fabricated using self-aligned processing

US7495946B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ulrike Gruening-von Schwerin · Munich, DE
• Thomas Happ · Tarrytown, US

Key dates

• Filing date: Mar 2, 2006
• Grant date: Feb 24, 2009
• Expiry date: Mar 2, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/884

Abstract

A memory includes transistors in rows and columns providing an array and conductive lines in columns across the array. The memory includes phase change elements contacting the conductive lines and self-aligned to the conductive lines. Each phase change element is coupled to one side of a source-drain path of a transistor.