Method for fabricating SONOS a memory
US7498228B2 · kind B2 · utility
0Cited by
13References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2007 |
| Grant date | Mar 3, 2009 |
| Priority date | — |
| Expiry date | Jul 9, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76828
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a SONOS memory is disclosed. First, a semiconductor substrate is provided and a SONOS memory cell is formed on said semiconductor substrate. A passivation layer is deposited on the SONOS memory cell and a contact pad is formed on the passivation layer. Subsequently, an ultraviolet treatment is performed and an annealing process is conducted thereafter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.