Plasma pre-treating surfaces for atomic layer deposition

US7498242B2 · kind B2 · utility

Assignee

• ASM America, Inc. · US

Inventors

• Devendra Kumar · Rochester Hills, US
• Kamal Kishore Goundar · Tama, JP
• Nathanael R. C. Kemeling
• Hideaki Fukuda · Hachioji, JP
• Hessel Sprey · Kessel-Lo, BE
• Maarten Stokhof · Leuven, BE

Key dates

• Filing date: Feb 21, 2006
• Grant date: Mar 3, 2009
• Expiry date: Jul 14, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76873
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Preferred embodiments are directed to providing conformal lining over openings formed in porous materials. Trenches are formed in, preferably, insulating layers. The layers are then adequately treated with a particular plasma process. Following this plasma treatment a self-limiting, self-saturating atomic layer deposition (ALD) reaction can occur without significantly filling the pores forming improved interconnects.